发明名称 Integrated transformer with stack structure
摘要 An integrated transformer with a stack structure comprises a middle dielectric layer, a bottom dielectric layer, a first winding and a second winding. A portion of the first winding is disposed over a surface of the middle dielectric layer and the remaining portion of the first winding is disposed over a surface of the bottom dielectric layer. A portion of the second winding is disposed over the surface of the middle dielectric layer and the remaining portion of the second winding is disposed over the surface of the bottom dielectric layer. The second winding doesn't intersect with the first winding. The portions of the first and second windings over the surface of the middle dielectric layer connect with the remaining portions of the first and second windings over the surface of the bottom dielectric through via plugs.
申请公布号 US7164339(B2) 申请公布日期 2007.01.16
申请号 US20050906540 申请日期 2005.02.24
申请人 WINBOND ELECTRONICS CORP. 发明人 HUANG KAI-YI
分类号 H01F5/00;H01L27/00 主分类号 H01F5/00
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