| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of flocculation at the time of forming a polysilicon film by the irradiation of high energy laser. SOLUTION: On a glass substrate 10, a buffer film 12 and an amorphous silicon film 14 are formed. Then, after removing a natural oxide film by washing the substrate with dilute fluorinated acid, the substrate is washed with ozone water to form an oxide film 16 on the surface. In this state, laser is irradiated to polycrystallize the amorphous silicon film 14 into the polysilicon film 18. COPYRIGHT: (C)2007,JPO&INPIT
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