| 摘要 |
PROBLEM TO BE SOLVED: To provide substrate processing equipment in which throughput can be enhanced while preventing adhesion of products into an exhaust means. SOLUTION: The substrate processing equipment has a system for supplying first processing gas containing trimethyl aluminum and second processing gas containing oxygen (O) alternately into a chamber for processing a wafer, and an exhaust system 250 and forms a thin film of aluminum oxide on the wafer. The exhaust system 250 comprises a vacuum pump having a housing 21 provided with an opening 22 for sucking atmosphere on the processing chamber side and an opening 23 for exhausting the sucked atmosphere, and a means provided between the suction opening 22 and the exhaust opening 23 in the housing 21 in order to transport the atmosphere on the suction opening 22 side to the exhaust opening 23 side, and a means for supplying inert gas of room temperature into the housing 21 in the vicinity of the exhaust opening 23 of the vacuum pump. COPYRIGHT: (C)2007,JPO&INPIT
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