METHOD OF HIGH TOPOGRAPHY PATTERNING

摘要

PROBLEM TO BE SOLVED: To provide a method of high topography patterning which results in a uniform pattern density facilitating the next processing steps and obtains relaxed requirements for active patterning lithography. SOLUTION: A method of isolating structures of a semiconductor material comprises a step of providing a pattern of the semiconductor material including at least one elevated line; a step of defining device regions which at least include at least one elevated line in the pattern; and a step of modifying the conductive properties of the semiconductor material outside the device regions so as to electrically isolate the device regions. COPYRIGHT: (C)2007,JPO&INPIT