发明名称 |
Plasma Treatment at Film Layer to Reduce Sheet Resistance and to Improve Via Contact Resistance |
摘要 |
A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
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申请公布号 |
US2007010080(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20060419542 |
申请日期 |
2006.05.22 |
申请人 |
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发明人 |
TSAI JIAN-SHIN;CHOU YU-HUA;LUO TZO-HUNG;TSENG CHI-CHAN;ZHANG WEI;YANG JONG-CHEN |
分类号 |
H01L21/3205;H01L21/44;H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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