| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal capable of suppressing a discontinuity phenomenon where the relationship between an interstitial oxygen concentration in the crystal and a flow rate of an inert gas discontinuously fluctuates and easily manufacturing a silicon single crystal having a interstitial oxygen concentration within a specified range in the magnetic field applied Czochralski method (MCZ method). SOLUTION: The silicon single crystal is manufactured by the MCZ method using a crucible having a straight body part with an inner diameter of a specific value, a bottom part and a curved part where the inner diameter decreases from the straight body part to the bottom part, which is installed in a chamber. When the molten liquid surface in the crucible is within a range including the boundary between the straight body part and the curved part and at least a part of the discontinuous liquid surface range where the relationship between the interstitial oxygen concentration in the silicon single crystal and the flow rate of an inert gas supplied to the chamber fluctuates discontinuously, the number of revolutions of the crucible is set to be 0.8-3 rpm. COPYRIGHT: (C)2007,JPO&INPIT
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