发明名称 |
Wide-Band High-Gain Limiting Amplifier with Parallel Resistor-Transistor Source Loads |
摘要 |
An amplifier has a wide bandwidth and a high gain by using parallel loads. Each load has a load resistor and a load p-channel transistor in parallel. The drain voltages of differential n-channel transistors can be set by the load resistors, while switching current is provided by the load p-channel transistors. The parallel load provides a high impedance to the drain nodes yet still provides driving current. A transconductance stage with a pair of differential transistors and two parallel loads drives a shunt-shunt-feedback stage that has another pair of differential transistors and two more parallel loads. Shunt resistors between the gate and drain of the differential transistors in the shunt-shunt-feedback stage provide shunt feedback and low impedance. Several pairs of transconductance and shunt-shunt-feedback stages can be cascaded together. The cascaded amplifier may be used as a signal repeater.
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申请公布号 |
US2007008035(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20050160730 |
申请日期 |
2005.07.06 |
申请人 |
LIU WING FAAT;ZHANG MICHAEL Y |
发明人 |
LIU WING FAAT;ZHANG MICHAEL Y. |
分类号 |
H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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主权项 |
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地址 |
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