发明名称 |
WAFER SEPARATION TECHNIQUE FOR THE FABRICATION OF FREE-STANDING (AL, IN, GA)N WAFERS |
摘要 |
A method of fabricating free-standing (Al, In, Ga)N substrates, by in situ separation of thick epitaxially grown nitride films from their foreign substrates. A suitable substrate for (Al, In, Ga)N film growth is selected, and foreign ions are implanted in the substrate to form a comparatively sharp concentration profile. An (Al, In Ga)N film is deposited on the substrate, and the deposited film is cooled to introduce thermal expansion mismatch-related strain, so that the film spontaneously separates from the substrate.
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申请公布号 |
WO2006113442(A8) |
申请公布日期 |
2007.01.11 |
申请号 |
WO2006US14083 |
申请日期 |
2006.04.13 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;SPECK, JAMES S.;BAKER, TROY, J.;HASKELL, BENJAMIN, A. |
发明人 |
SPECK, JAMES S.;BAKER, TROY, J.;HASKELL, BENJAMIN, A. |
分类号 |
H01L21/3205;H01L21/28;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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地址 |
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