| 摘要 |
A semiconductor memory device is provided to increase internal voltage supply capability, by enabling a plurality of internal voltage generating circuits to generate an internal voltage having the same voltage level. A semiconductor chip(1) comprises a first voltage generation unit(11) generating a first voltage in response to a first operation control signal, a second voltage generation unit(12) for generating a second voltage according to a second operation control signal, a first operation control unit(13) for generating the first operation control signal, a second operation control unit(14) for generating the second operation control signal, a first bonding pad(BP1) connected to the first voltage generation unit, and a second bonding pad(BP2) connected to the second voltage generation unit. A packaging substrate(2) comprises a first substrate pad connected to the first bonding pad, and a second substrate pad connected to the second bonding pad. The first substrate pad and the second substrate pad are connected through the packaging substrate.
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