Passgate structures for use in low-voltage applications

摘要

Enhanced passgate structures for use in low-voltage systems are presented in which the influence of V_t on the range of signals passed by single-transistor passgates is reduced. In one arrangement, the V_GATE-V_t limit for signals propagated through NMOS passgates is raised by applying a higher V_GATE; in another arrangement, the V_t is lowered. The use of CMOS passgates in applications where single-transistor passgates have traditionally been used is also presented.