| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent heat resistance, and a method for manufacturing the semiconductor device. SOLUTION: The first invented semiconductor device includes a first conductive semiconductor layer; a first gate insulating film formed on the first conductive semiconductor layer; a first gate electrode formed on the first gate insulating film and having crystal grains of a first metal comprising Ru and a second metal selected from a group comprising W, Ni, Mo, Rh, Pd, Re, Ir, and Pt segregated from the crystal grains of the first metal; and first source-drain areas formed on the first conductive semiconductor layer through the first gate insulating film in a gate lengthwise direction. COPYRIGHT: (C)2007,JPO&INPIT
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