发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method which can suppress loss in the semiconductor equipped with inductive element. SOLUTION: The semiconductor devices comprises a semiconductor substrate 1, a first insulating layer 11, a first conductor 12, a second insulating layer 13, and a second conductor 14, wherein the second conductor 14 has a spiral inductive element 15, and in the second insulating layer 13 a concave portion 20 is formed in the center region 21 which is more interior of the most inner perimeter of the inductive element 15, thereby making this portion to be thinner compared with other portions. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007005702(A) 申请公布日期 2007.01.11
申请号 JP20050186648 申请日期 2005.06.27
申请人 FUJIKURA LTD 发明人 SATO MASAKAZU;ITO TATSUYA
分类号 H01L21/822;H01L21/3205;H01L21/768;H01L23/52;H01L27/04 主分类号 H01L21/822
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