| 摘要 |
PROBLEM TO BE SOLVED: To prevent fuse attack (Attack) by considering an etch rate due to the plasma density of a semiconductor element to rearrange a fuse box and uniformly forming a residual oxide film (Rox; Remain Oxide) with respect to the fuse box of the semiconductor element. SOLUTION: In a repair etching process for opening a fuse box in a chip, etching loading effects attendant on the pattern density of the fuse box can be uniformly reflected, and residual oxide films can be constantly distributed to the fuses of all the fuse boxes regardless of the size of an open region. Consequently, fuse attack is prevented due to excessive oxide film etching on a small fuse, and the attack is prevented in fuse blowing to improve an FTA (Fixed To Attemption) yield. COPYRIGHT: (C)2007,JPO&INPIT |
