Semiconductor device and method of fabricating the same

摘要

A semiconductor and a method of fabricating the same are provided. The method includes: forming an insulation layer on a substrate; forming a trench by selectively etching the insulation layer; electroplating a copper layer in the trench and on the insulation layer under such conditions that a seam is formed at a top middle portion of the trench; and polishing the copper layer to form a copper metal line with the seam.