INORGANIC SEMICONDUCTIVE FILMS AND METHODS THEREFOR
摘要
Inorganic semiconductive films are made by depositing a suitable precursor sustance upon a substrate (S20), irradiating the precursor substance with electromagnetic radiation to form a nascent film (S30), and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film (S40).
申请公布号
WO2007005813(A2)
申请公布日期
2007.01.11
申请号
WO2006US25953
申请日期
2006.06.29
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;PUNSALAN, DAVID;THOMPSON, JOHN
