发明名称 |
METHOD FOR PRODUCING PATTERN, METHOD FOR PROCESSING DATA, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DATA PROCESSING PROGRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a pattern for decreasing difficulty in a lithographic process. <P>SOLUTION: The method includes: a step S102 of extracting a correction object pattern having a dimension equal to or less than a threshold from first design data of a semiconductor device; a step S103 of calculating first characteristics of the semiconductor device based on the first design data; a step S104 of generating second design data by correcting the correction object pattern included in the first design data; a step S105 of calculating second characteristics of the semiconductor device based on the second design data; a step S106 of inspecting whether the characteristics difference between the first characteristics and the second characteristics is no more than an allowed value; and a step S107 of deciding to use the second design data for the manufacture of the semiconductor device when the characteristics difference is no more than the allowed value. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007003997(A) |
申请公布日期 |
2007.01.11 |
申请号 |
JP20050186311 |
申请日期 |
2005.06.27 |
申请人 |
TOSHIBA CORP |
发明人 |
NAKANO AYAKO;TANAKA SATOSHI;KOTANI TOSHIYA |
分类号 |
G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027;H01L21/82 |
主分类号 |
G03F1/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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