发明名称 METHOD FOR PRODUCING PATTERN, METHOD FOR PROCESSING DATA, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND DATA PROCESSING PROGRAM
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a pattern for decreasing difficulty in a lithographic process. <P>SOLUTION: The method includes: a step S102 of extracting a correction object pattern having a dimension equal to or less than a threshold from first design data of a semiconductor device; a step S103 of calculating first characteristics of the semiconductor device based on the first design data; a step S104 of generating second design data by correcting the correction object pattern included in the first design data; a step S105 of calculating second characteristics of the semiconductor device based on the second design data; a step S106 of inspecting whether the characteristics difference between the first characteristics and the second characteristics is no more than an allowed value; and a step S107 of deciding to use the second design data for the manufacture of the semiconductor device when the characteristics difference is no more than the allowed value. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007003997(A) 申请公布日期 2007.01.11
申请号 JP20050186311 申请日期 2005.06.27
申请人 TOSHIBA CORP 发明人 NAKANO AYAKO;TANAKA SATOSHI;KOTANI TOSHIYA
分类号 G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027;H01L21/82 主分类号 G03F1/36
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