| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device high in reliability/performance by a basic constitution that, after removing damage in inorganic system low dielectric copnstant film, side wall passivation is formed by organic system low dielectric copnstant film material. <P>SOLUTION: In the semiconductor device, a via-hole used for connecting a first interconnect line film with a second interconnect line film is constituted in an insulating film layer between the first interconnect line film and second interconnect line film. The insulating film layer is constituted with an inorganic system low dielectric copnstant material, and an organic system low dielectric copnstant material is arranged in a side of the via-hole. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
