SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG AND FABRICATION METHOD THEREOF

摘要

A semiconductor device having a contact plug and a manufacturing method thereof are provided to prevent electrical short with a neighboring direct contact pad by forming an additional landing pad on a buried contact pad to generate a step with respect to the neighboring direct contact pad. An isolation layer(101) is formed on a predetermined region of a semiconductor substrate(100) to define active regions(103a,103b,103c). Word lines are formed to cross the active regions. A direct contact pad(109) and a buried contact pad(111) are formed on the active regions between the word lines to be electrically connected to the active regions. An additional landing pad is formed on the buried contact pad to be overlapped with a part of at least the buried contact pad. An interlayer dielectric including the additional lading pad is formed on a substrate where the additional landing pad is formed. A storage node contact plug(137a) is electrically connected to the additional landing pad by passing through the interlayer dielectric.