| 摘要 |
A semiconductor device is provided to guarantee a process margin by greatly increasing the width of a part of an active region in which a contactor is formed. An active region(116) is defined in a semiconductor substrate(110) by an isolation region(113). At least a pair of gate electrodes(120) cross a portion on the active region and the isolation region, separated from each other. The active region includes a first region(116a) positioned between the gate electrodes, a pair of second regions(116b) positioned at both separated sides of the first region, and a pair of third regions(116c) positioned between the first and the second regions wherein the gate electrode crosses the third region. The width of the second regions is extended in a direction of the gate electrode. A bitline(130) is electrically connected to the first region, and a capacitor is electrically connected to the second region wherein the capacitor is positioned over the bitline.
|
