| 摘要 |
The object of providing a method for manufacturing a phase change memory, as well as a phase change memory so as to better harmonize the contrary requirements for the phase change material is solved by the present invention by a method for manufacturing a phase change memory comprising at least one resistively switching memory cell, wherein the phase change material layer contains a switching active Ga<SUB>x</SUB>Ge<SUB>y</SUB>In<SUB>z</SUB>Sb<SUB>1-x-y-z </SUB>material compound that is doped with nitrogen or oxygen. A phase change memory according to the present invention comprising a phase change material layer with the chemical composition Ga<SUB>x</SUB>Ge<SUB>y</SUB>In<SUB>z</SUB>Sb<SUB>1-x-y-z</SUB>:N/:O is adapted to be operated with lower currents, has a higher writing rate, and is characterized by improved data storage at increased temperatures.
|
