发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes: (A) providing a wafer to which a photo-resist is applied; (B) forming a reacted portion in the photo-resist by exposing the wafer to a light through a mask having a translucent section, the reacted portion being a portion reacted with the light; and (C) forming a resist mask having an opening portion corresponding to the translucent section by dissolving the reacted portion. The opening portion does not penetrate the photo-resist in a case where an exposure amount in the (B) process is a first exposure amount. On the other hand, the opening portion penetrates the photo-resist in a case where the exposure amount is a second exposure amount larger than the first exposure amount.
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申请公布号 |
US2007009836(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
US20060476885 |
申请日期 |
2006.06.29 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
YANAGISAWA MASAYUKI |
分类号 |
G03F7/20;G03F1/00;G03F1/70;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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