发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device includes: (A) providing a wafer to which a photo-resist is applied; (B) forming a reacted portion in the photo-resist by exposing the wafer to a light through a mask having a translucent section, the reacted portion being a portion reacted with the light; and (C) forming a resist mask having an opening portion corresponding to the translucent section by dissolving the reacted portion. The opening portion does not penetrate the photo-resist in a case where an exposure amount in the (B) process is a first exposure amount. On the other hand, the opening portion penetrates the photo-resist in a case where the exposure amount is a second exposure amount larger than the first exposure amount.
申请公布号 US2007009836(A1) 申请公布日期 2007.01.11
申请号 US20060476885 申请日期 2006.06.29
申请人 NEC ELECTRONICS CORPORATION 发明人 YANAGISAWA MASAYUKI
分类号 G03F7/20;G03F1/00;G03F1/70;H01L21/027 主分类号 G03F7/20
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