SOURCE SIDE INJECTION STORAGE DEVICE AND METHOD THEREFOR

摘要

A storage device (10) has a two bit cell in which the select electrode (52) is nearest the channel between two storage layers (38, 40). Individual control electrodes (20, 22) are over individual storage layers (38, 40). Adjacent cells are separated by a doped region (34) that is shared between the adjacent cells. The doped region (34) is formed by an implant in which the control gates (22, 24) of adjacent cells are used as a mask. This structure provides for reduced area while retaining the ability to perform programming by source side injection.