| 摘要 |
PROBLEM TO BE SOLVED: To reduce roughness of an SOI layer surface of MLD-SIMOX and the interface located between the SOI layer and the BOX layer. SOLUTION: The manufacturing method of an SIMOX wafer comprises a first process for forming a heavily-doped layer 2 of oxygen inside a silicon wafer 1 by implanting oxygen ions by heating the silicon wafer 1, a second process for forming an amorphous layer 3 in the silicon wafer 1 by implanting oxygen ions to the silicon wafer 1 obtained in the first process, and a third process for forming an embedded oxide film, that is, a BOX layer 4, by performing heat treatment for the silicon wafer 1 obtained in the second process. In the second process, oxygen ions are implanted, by preliminarily heating the silicon wafer 1 to a set temperature which is lower than the heating temperature in the first process. COPYRIGHT: (C)2007,JPO&INPIT
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