LED WITH METAL NITRIDE LAYER AND METHOD OF FORMING THE SAME

摘要

A light emitting diode having a metal nitride layer and its manufacturing method are provided to reduce defect density by growing an N-gallium nitride layer on the metal nitride layer. A metal nitride layer(11) is formed on a substrate(10). An N-gallium nitride layer(12) is formed on the metal nitride layer. An active layer(13) is formed on the N-gallium nitride layer. A P-gallium nitride layer(14) is formed on the active layer. A reflection layer(21) formed on a lower portion of the substrate. The metal nitride layer has a thickness of 5 to 200 nano-meters and a thermal treatment process is performed thereon at 600 to 1000‹C.