PREPARING A SURFACE OF A SEMICONDUCTOR WAFER FOR BONDING WITH ANOTHER WAFER

摘要

The invention relates to a method for preparing an oxidised surface of a wafer for bonding with another wafer, the oxidised surface having been subject to an implantation of atomic species, the method including a first step of cleaning the oxidised surface by employing NH4OH and H2O2, and a second step of cleaning by employing hydrochloric species (HCI), wherein the first step is implemented so as to etch from about 10 Š to about 120 Š and wherein the second step is implemented at a selected temperature below around 50‹C during about 10 minutes or less. ® KIPO & WIPO 2007