发明名称
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor field effect biosensor allowing the adjustment of sensor sensitivity dispersion due to dispersion of a threshold value. SOLUTION: This semiconductor field effect biosensor uses a TFT formed on a substrate. The biosensor is so structured that the TFT has an ion sensing region 19 on the upper part of a channel region through a gate insulation film 18, and has a back gate 12 on the lower layer of the channel region through an insulation film 13.
申请公布号 JP3867510(B2) 申请公布日期 2007.01.10
申请号 JP20010101309 申请日期 2001.03.30
申请人 发明人
分类号 G01N27/414 主分类号 G01N27/414
代理机构 代理人
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