SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to improve electrical insulation characteristics between contact plugs by using a contact hole being self-aligned. Plural gate structure patterns are formed on a semiconductor substrate(110) to be extended along a first direction and separated from each other. A gate(122) and a first mask pattern(124) are layered on the gate structure pattern. A first interlayer dielectric(130) is formed to cover the gate structure patterns. Plural second mask patterns are formed to be extended along a second direction crossing the first direction and separated from each other. The first interlayer dielectric is etched to form a contact hole(136). The contact hole is self-aligned to the first and second mask patterns in at least one contact region that is defined between a pair of first mask patterns and a pair of second mask patterns.