METHOD OF MANUFACTURING A FLASH MEMORY DEVICE

摘要

A method for fabricating a flash memory device is provided to broaden the area fro a conductive layer for a floating gate and improve retention characteristic of data information stored in a flash memory device by recessing a predetermined depth of a semiconductor substrate in an active region. A semiconductor substrate(10) on an active region defined by an isolation layer(12) is etched by a predetermined depth to form a recess region. A conductive layer(16) for a floating gate is formed along the boundary of the resultant structure. A filling insulation layer for filling the recess region is formed. The filling insulation layer is planarized to the upper part of the isolation layer. The filling insulation layer is removed. A dielectric layer and a conductive layer for a control gate are formed on the conductive layer for the floating gate.