发明名称 |
Metal-insulator-metal device |
摘要 |
A method for forming a metal-insulator-metal device includes imprinting at least one first layer to form a first impression, removing a portion of at least one second layer through the first depression to form a recess in the at least one second layer bordered by a first side, a first overhang along the first side, a second opposite side and a second overhang along the second side. The method also includes depositing a first metal in the recess spaced from the first side and the second side and oxidizing the first metal to create a non-linear dielectric.
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申请公布号 |
US7160745(B2) |
申请公布日期 |
2007.01.09 |
申请号 |
US20040975940 |
申请日期 |
2004.10.28 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
ULMER KURT;WENG JIAN-GANG;MARDILOVICH PETER;RUDIN JOHN CHRISTOPHER |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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