| 摘要 |
A MOS device having a shallow conjunction depth and a method of fabricating the same are provided to physically intercept a gate oxide layer from a depletion region of a source/drain. A MOS(Metal Oxide Silicon) device includes a silicon substrate(10), a gate oxide layer(13) formed in a channel region of the silicon substrate and having a first depth and a first length, a gate(14) formed on an upper portion of the gate oxide layer and having a second length, and a source(17) and a drain(18) formed on both sides of the gate oxide layer and having a second depth equal to the first depth. The source and drain have a first conductive high-concentration dopped layer, a second conductive dopped layer formed on the first conductive high-concentration dopped layer, and a first conductive low-concentration dopped layer.
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