| 摘要 |
A method for manufacturing a semiconductor device is provided to simplify processes and to shorten process time by performing CMP on an interlayer dielectric using an auto-stop slurry. A substrate(21) with a cell region(C) and a peripheral region(P) is prepared. A cylindrical capacitor(23) is formed on the cell region. An interlayer dielectric(24) is formed to cover the cylindrical capacitor. A photoresist pattern(30) is formed to expose the cell region. The exposed interlayer dielectric of the cell region is etched using the photoresist pattern as a mask to have the same height with the interlayer dielectric of the peripheral region. After the photoresist pattern is removed, the interlayer dielectric is planarized by CMP using an auto-stop slurry.
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