METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING RECESSD GATE PROCESS

摘要

A method for manufacturing a semiconductor device is provided to improve the reliability of the device by preventing the attack against on a semiconductor substrate using an amorphous carbon hard mask as an etch barrier. An insulating layer is formed on a semiconductor substrate(21). A hard mask pattern of double structure is formed on the insulating layer. A recess pattern(28) is formed on the resultant structure by etching the substrate using the hard mask pattern as an etch barrier. The hard mask pattern and the insulating layer are removed therefrom. A gate insulating layer is formed on the resultant structure. The hard mask pattern includes an amorphous carbon hard mask.