| 摘要 |
<p>A method for manufacturing a SONOS device is provided to form a stable gate insulating layer irrespective of the variation of EFH(Effective Fox Height) by using SA-STI(Self Align Shallow Trench Isolation) processing. A lower insulating layer(13) is formed on a substrate(11). A charge storage layer(15) is formed by nitrifying a portion of the lower insulating layer. An upper insulating layer(17) is formed by oxidizing a portion of the charge storage layer. A capping layer(19) is formed on the upper insulating layer. A trench is formed in the substrate by using the capping layer as an etch barrier. An isolation layer(21) is then formed by depositing an insulating layer in the trench and planarizing the insulating layer.</p> |
