| 摘要 |
A method for fabricating a contact hole in a semiconductor device is provided to improve the yield of the device and to enhance reliability of the device by preventing the generation of contact not open and restraining the warpage of a contact hole. A first insulating layer is formed on a conductive layer(41). A dummy pattern(43) is formed on a predetermined region of the first insulating layer. A second insulating layer is formed on the entire surface of the resultant structure. A contact opening portion for exposing the dummy pattern to the outside is formed on the resultant structure by etching selectively the second insulating layer using a hard mask as an etch mask. A contact hole is formed by etching the resultant structure until the conductive layer is exposed to the outside.
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