METHOD OF MANUFACTURING SEMICONDUTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve throughput and to restrain the channeling by performing an additional ion implantation using cluster type B18H22 as dopant. A PMOS(P channel Metal Oxide Semiconductor) including a P type junction region and an interlayer dielectric(4) for covering the PMOS are formed on a semiconductor substrate(1). The P type junction region of the PMOS is exposed to the outside by etching selectively the interlayer dielectric. An ion implantation is performed on the exposed P type junction region using B18H22 as dopants. Then, an annealing process is performed on the resultant structure in order to activate the B18H22.