| 摘要 |
<p>A flash memory device is provided to prevent program distribution due to interference effect of a floating gate by forming the floating gate with a dog-bone shape. A flash memory device includes a control gate(22) defined in an active region of a semiconductor substrate and floating gates(16,18) having a dog-bone shape isolated by a control gate and a dielectric film. At this time, the width of a portion formed at the control gate is narrow than the width of a portion without forming the control gate. Also, an isolation layer(12) is formed at a non-active region, wherein the width of a portion having the control gate is wider than that of a portion without having the control gate.</p> |
