MULTI-LEVEL INTERCONNECTIONS FOR AN INTEGRATED CIRCUIT CHIP

摘要

Multilevel metallization layouts for an integrated circuit chip (30) including transistors having first (31 ), second (32) and third (33) elements to which metallization layouts connect. The layouts minimize current limiting mechanism including electromigration by positioning the connection (39) for the second contact vertically (32) from the chip (30), overlapping the planes and fingers of the metallization layouts to the first and second elements (31 ) and (32) and forming a pyramid or staircase of multilevel metallization layers (45) and (46) to smooth diagonal current flow.