| 发明名称 |
DRAM having carbon stack capacitor |
| 摘要 |
A DRAM stack capacitor and a fabrication method thereof is disclosed. The DRAM stack capacitor is formed with a first capacitor electrode comprising a conductive carbon layer, a capacitor dielectric layer and a second capacitor electrode.
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| 申请公布号 |
US2007001208(A1) |
申请公布日期 |
2007.01.04 |
| 申请号 |
US20050170886 |
申请日期 |
2005.06.30 |
| 申请人 |
GRAHAM ANDREW;DUESBERG GEORG;STEINHOEGL WERNER |
发明人 |
GRAHAM ANDREW;DUESBERG GEORG;STEINHOEGL WERNER |
| 分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
| 代理机构 |
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