发明名称 |
Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications |
摘要 |
An indium phosphide based double hetero junction bipolar transistor with an increased collector-base breakdown voltage and a reduced operational knee voltage is provided by manipulating the conductivity in the collector region. The collector is formed using layers of different conductivities, with a region of the collector relatively close to the base being unintentionally or low doped. A voltage drop across the unintentionally doped region reduces the maximum value of the electric field and the velocity of carriers injected into the collector region at the base-collector junction. The conductivity throughout the collector region may be graded such that the highest conductivity occurs near the sub-collector and lowest conductivity occurs near the base region.
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申请公布号 |
US2007001195(A1) |
申请公布日期 |
2007.01.04 |
申请号 |
US20060517792 |
申请日期 |
2006.09.08 |
申请人 |
XINDIUM TECHNOLOGIES, INC. |
发明人 |
SHEN SHYH-CHIANG;CARUTH DAVID C.;FENG MILTON |
分类号 |
H01L31/00;H01L29/08;H01L29/737;H01L29/739 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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