发明名称 METHOD OF FABRICATING A LIGHT EMITTING DEVICE
摘要 There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
申请公布号 US2007004157(A1) 申请公布日期 2007.01.04
申请号 US20060465360 申请日期 2006.08.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SUZAWA HIDEOMI;ONO KOJI;TAKAYAMA TORU
分类号 H01L21/336 主分类号 H01L21/336
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