发明名称 Semiconductor device with improved signal transmission characteristics
摘要 Provided is a semiconductor device with improved signal transmission characteristics. The semiconductor device includes a substrate and a semiconductor chip. The substrate includes connection pads mounted in a central area of a top surface of the substrate, balls attached to a bottom surface of the substrate, and an area on the bottom of the substrate directly below the connection pads which is depopulated of balls. The semiconductor chip Whose bottom surface is mounted on one of the two sections has an edge-pad structure in which chip pads are disposed on a portion of a top surface so as to be adjacent to the connection pads. The connection pads are connected to the corresponding chip pads by bonding wires. The semiconductor chip is less than half the size of the substrate. The chip pads are disposed in the same direction as the connection pads. The connection pads are aligned in one or more rows in a central area of the substrate. The chip pads are aligned on the top surface of the semiconductor chip in one or more rows. The top surface of the substrate is divided by the connection pads into two sections, and the semiconductor chip is mounted on one of the two sections. The semiconductor device has a package structure in which center balls are depopulated and which maintains a consistent length of the bonding wires even when the size of the semiconductor chip is reduced, thereby preventing degradation of signal transmission characteristics and increasing the integration density of the semiconductor chip.
申请公布号 US2007001316(A1) 申请公布日期 2007.01.04
申请号 US20050169393 申请日期 2005.06.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JUNG-HWAN
分类号 H01L23/48;H01L23/52 主分类号 H01L23/48
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