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发明名称
Thermisches CVD Verfahren zur Erzeugung eines mit Kohlenstoff dotierten Siliziumoxidfilms mit niedriger dielektrischer Konstante
摘要
申请公布号
DE69932409(T2)
申请公布日期
2007.01.04
申请号
DE19996032409T
申请日期
1999.05.04
申请人
APPLIED MATERIALS INC.
发明人
XIA, LI-QUN;GEIGER, FABRICE;GAILLARD, FREDERIC;YIEH, ELLIE;LIM, TIAN
分类号
C23C16/40;H01L21/316
主分类号
C23C16/40
代理机构
代理人
主权项
地址
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