Method of supporting microelectronic wafer during backside processing using carrier having radiation absorbing film thereon

摘要

A method of supporting a microelectronic wafer during backside processing. The method comprises: selecting a rigid carrier including a radiation absorbing film thereon, an adhesive, and a radiation source to emit radiation at a predetermined wavelength range; forming a wafer-carrier stack by providing the adhesive between the wafer and the carrier and curing the adhesive to bond the wafer to the carrier; subjecting the wafer in the wafer-carrier stack to backside processing; and removing the carrier and the adhesive from the wafer-carrier stack comprising detackifying the adhesive by irradiating the wafer-carrier stack from a carrier side thereof with radiation from the radiation source. The carrier is adapted to transmit therethrough at least some of the radiation from the radiation source. and the radiation absorbing film is adapted to absorb substantially all radiation transmitted through the carrier and is further adapted to be heated to detackify the adhesive as a result of absorbing said substantially all radiation.