| 摘要 |
A method for fabricating a CMOS image sensor is provided to prevent junction leakage current and deterioration of device characteristics by improving defects in a process for removing a hard mask oxide layer. An isolation layer(206) is formed on a substrate(201) by performing an STI(Shallow Trench Isolation) process. A recess part is formed by recessing the isolation layer. A first passivation layer(207) is buried into the recess part in order to protect the isolation layer. A gate insulating layer(208), a gate conductive layer(209), and a hard mask oxide layer are laminated on the substrate. A gate pattern is formed by performing a selective etching process. A photodiode(213) is formed within the substrate by performing an ion implantation process. A second passivation layer is formed on a sidewall of a gate pattern. The hard mask oxide layer is removed.
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