发明名称 |
Active matrix substrate and method of fabricating the same |
摘要 |
An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. As an alternative, the polysilicon thin film diode may be comprised of two lateral diodes electrically connected in parallel to each other and arranged in opposite directions.
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申请公布号 |
US7157315(B2) |
申请公布日期 |
2007.01.02 |
申请号 |
US20040778442 |
申请日期 |
2004.02.13 |
申请人 |
NEC LCD TECHNOLOGIES, LTD. |
发明人 |
OKUMURA HIROSHI;SUKEGAWA OSAMU |
分类号 |
G02F1/1333;H01L21/84;G02F1/1365;G09F9/00;G09F9/30;G09F9/35;H01L21/329;H01L29/786;H01L29/861 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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