| 摘要 |
<p>A method for forming an align mark of a semiconductor device is provided to restrain the damage of the align mark due to a planarizing process by changing the width of the align mark according to the degree of polishing in the planarizing process. A first insulating layer(110) is formed on a semiconductor substrate(100). An align mark layer is formed on the first insulating layer. An align mark composed of a plurality of line patterns is formed on the resultant structure by patterning selectively the align mark layer. A second insulating layer(130) is formed on the align mark. The align mark is exposed to the outside by polishing the second insulating layer using a planarizing process. The align mark has a nonuniform width.</p> |
