发明名称 MEMORY CELL, READ DEVICE FOR THE MEMORY CELL, AND MEMORY ASSEMBLIES WITH SUCH A MEMORY CELL, READ DEVICE AND CORRESPONDING METHOD
摘要 A memory cell, a read device, a memory assembly and a method for operating the memory cell are provided to supply a low voltage, by securing small space, short access time and low power consumption. A memory cell(1) includes two read ports connected to a read line(5,6), and three transistors(11,12,13). The memory cell is designed to be read by differential reading where information stored in the memory cell itself includes evaluation to the current between the two read ports during a read operation. The memory cell sets electrical connection between the read ports at lower impedance when the memory cell separately stores 0 or 1 during the read operation, than when the memory cell separately stores 1 or 0.
申请公布号 KR20070000360(A) 申请公布日期 2007.01.02
申请号 KR20060058021 申请日期 2006.06.27
申请人 INFINEON TECHNOLOGIES AG 发明人 HUBER PETER;MARTELLONI YANNICK;NIRSCHL THOMAS;OSTERMAYR MARTIN
分类号 G11C7/00;G11C7/22 主分类号 G11C7/00
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