Methods of fabricating a semiconductor integrated circuit with thin film transistors using a selective epitaxial growth technique and a partial planarization technique and semiconductor integrated circuits fabricated thereby,申请号KR20040071886-传众专利搜索

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发明名称	Methods of fabricating a semiconductor integrated circuit with thin film transistors using a selective epitaxial growth technique and a partial planarization technique and semiconductor integrated circuits fabricated thereby
摘要
申请公布号	KR100663349(B1)	申请公布日期	2007.01.02
申请号	KR20040071886	申请日期	2004.09.08
申请人		发明人
分类号	H01L27/11	主分类号	H01L27/11
代理机构		代理人
主权项
地址

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