| 摘要 |
A CMOS image sensor with improved performance through improved uniformity of micro-lens size and a method for manufacturing the same are provided. The CMOS image sensor includes photodiodes formed on a semiconductor substrate for producing charges consistent with a quantity of incident light, an interlayer insulation layer formed on an entire surface of the semiconductor substrate including the photodiodes , color filter layers formed in the interlayer insulation layer for passing light of respective wavelengths, and micro-lenses formed on the color filter layers for concentrating light onto the photodiodes through the color filter layers.
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