发明名称 Structure improvement of depletion region in p-i-n photodiode
摘要 The present invention with a structure of depletion region improves the product of output power and bandwidth of a photodetector and prevents the drifting velocity of electron from slowing down under a bias, which can be applied to a photodetector of communicative wavelength over optical fiber.
申请公布号 US2006289960(A1) 申请公布日期 2006.12.28
申请号 US20050158065 申请日期 2005.06.22
申请人 NATIONAL CENTRAL UNIVERSITY 发明人 WU YEN-HSIANG
分类号 H01L29/221 主分类号 H01L29/221
代理机构 代理人
主权项
地址